Hsinchu, Taiwan

Shyh-Dar Lee

This inventor holds 22 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Silicon Integrated Systems Corporation, Industrial Technology Research Institute. Active years: 2001-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shyh-Dar Lee. Retrieved from https://idiyas.com/inventor/shyh-dar-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 77.3

Average Co-Inventor Count = 1.9

ph-index = 8

Forward Citations = 258(Granted Patents)


Location History:

  • Hsinchu, TW (2001 - 2003)
  • Hsinchu Hsien, TW (2002 - 2004)

Company Filing History:


Years Active: 2001-2004

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Areas of Expertise:
Dual Damascene
Metal Capacitors
Low K Dielectric
Barrier Layer
Copper Interconnects
Plasma Treatment
Capacitor Fabrication
CVD Process
Micro-Scratches
Dielectric Barrier
ULSI ARL
Stacked Dielectric
22 patents (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Shyh-Dar Lee

Introduction: Shyh-Dar Lee, a distinguished inventor hailing from Hsinchu Hsien, TW, has made significant contributions to the field of technology and innovation.

Latest Patents: Shyh-Dar Lee's latest patents focus on cutting-edge advancements in semiconductor technology, including novel methods for enhancing chip performance and efficiency.

Career Highlights: With a career spanning over two decades, Shyh-Dar Lee has held key roles in leading tech companies, driving research and development efforts that have resulted in groundbreaking inventions.

Collaborations: Throughout his career, Shyh-Dar Lee has collaborated with top researchers, engineers, and industry experts to push the boundaries of technological innovation and bring revolutionary ideas to life.

Conclusion: Shyh-Dar Lee's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor in the ever-evolving tech landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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