The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Jun. 07, 2002
Applicant:
Inventors:
Shyh-Dar Lee, Hsinchu Hsien, TW;
Chen-Chiu Hsue, Hsinchu, TW;
Assignee:
Silicon Integrated Systems Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method for improving adhesion of a low k dielectric to a barrier layer. A substrate covered by an insulating layer having copper interconnects is provided. A sealing layer is formed on the copper interconnects and the insulating layer. A plasma treatment is performed on the sealing layer by a reaction gas including at least one of CO , NH , NO , SiH , trimethylsilane, and tetramethylsilane. A low k dielectric layer is formed on the sealing layer.