The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Mar. 11, 2002
Chen-Chiu Hsue, Hsinchu, TW;
Shyh-Dar Lee, Hsinchu Hsien, TW;
Silicon Integrated Systems Corp., Hsin Chu, TW;
Abstract
A capacitor in which the lower electrode and an interconnect line are located at the same level. The capacitor includes a first conductive line and a second conductive line on a substrate located at the same level, wherein the second conductive line defines a capacitor region and is used as a lower electrode of the capacitor; an insulating layer on the substrate, the first conductive line, and the second conductive line; and a third conductive line on the insulating layer in the capacitor region such that the third conductive line is used as an upper electrode of the capacitor. Since the lower electrode and an interconnect line can be in-situ (concurrently) formed to be located at the same level, one mask can be omitted compared with the conventional method, and production costs can be reduced.