The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Jun. 15, 2001
Chen-Chiu Hsue, Hsinchu, TW;
Shyh-Dar Lee, Hsinchu Hsien, TW;
Silicon Integrated Systems Corp., Hsin Chu, TW;
Abstract
This invention provides a method for forming a metal capacitor in a damascene process. Before the thin-film capacitor is formed, the underlying interconnections are fabricated with Cu metal by damascene process. The lower electrode is formed in a dual damascene process, which is also used to form the dual damascene structures comprising wires and plugs. An insulator is disposed to isolate the dual damascene structures with each other. In this dual damascene process, an anti-reflection layer is used and formed on the insulator, and the anti-reflection layer is also used as a hard mask layer, a polishing stop layer and an etching stop layer. Then, another insulator and a metal layer are formed on the anti-reflection layer, and encounter a photolithography step and an etching step to obtain an upper electrode and a capacitor insulator. After forming the metal capacitor, the upper interconnections are fabricated with another dual damascene processes.