The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Jun. 07, 2002
Shyh-Dar Lee, Hsinchu Hsien, TW;
Silicon Integrated Systems Corp., Hsin Chu, TW;
Abstract
A process for fabricating a dual damascene structure. First, a substrate having a dielectric layer is provided. A cap layer and a mask layer with at least one trench pattern are sequentially formed on the dielectric layer. Thereafter, a photoresist layer with at least one via pattern aligned with the trench pattern is formed overlaying the mask layer and part of the cap layer. Next, the via pattern is transferred into the cap layer and the upper half of the dielectric layer. The photoresist layer is then removed. Subsequently, the trench pattern is transferred into the cap layer and the upper half of the dielectric layer, and simultaneously the via pattern in the upper half of the dielectric layer is transferred into the lower half of the dielectric layer. Finally, the trench and the via in the dielectric layer are filled with a conductive layer.