The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Dec. 21, 2001
Applicant:
Inventors:
Chen-Chiu Hsue, Hsinchu, TW;
Shyh-Dar Lee, Hsinchu Hsien, TW;
Assignee:
Silicon Integrated Systems Corp., Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
This invention provides a metal capacitor with damascene structures. Before the thin-film capacitor is formed, the underlying interconnections, such as a first Cu wire and a second Cu wire, are fabricated with Cu by damascene processes. The thin-film capacitor composed of a first metal layer contacting the first Cu wire, a dielectric layer and a second metal layer is formed in an insulator and a stop layer. A first Cu damascene structure and a second Cu damascene structure are disposed on the thin-film capacitor and the second Cu wire, respectively.