Taichung, Taiwan

Shih Wei Bih

This inventor holds 15 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2019-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shih Wei Bih. Retrieved from https://idiyas.com/inventor/shih-wei-bih

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 100.0

Average Co-Inventor Count = 3.9

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Hsinchu, TW (2023)
  • Taichung, TW (2019 - 2024)

Company Filing History:


Years Active: 2019-2024

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Areas of Expertise:
Metal Gate Overhang
Dummy Gate Electrode
Interconnect Structure
Redistribution Layer
PVD Target Design
Adhesion Layer
Sputtering Method
Bonding Pad Process
Insulation Layer
Fabrication Method
15 patents (USPTO):Explore Patents

Title: Innovating Semiconductor Technologies: The Contributions of Shih Wei Bih

Introduction: Shih Wei Bih, an accomplished inventor based in Taichung, Taiwan, has made significant strides in the field of semiconductor technology. With a portfolio comprising 15 patents, he has demonstrated remarkable ingenuity in developing advanced materials and techniques that enhance the performance of semiconductor devices.

Latest Patents: Among his latest inventions are two noteworthy patents. The first, titled "Reducing Metal Gate Overhang by Forming a Top-Wide Bottom-Narrow Dummy Gate Electrode," introduces a method for fabricating a dummy gate electrode with a unique design. This innovative approach involves etching a polysilicon layer to create a gate electrode with a top portion that has a larger lateral dimension compared to its bottom portion. This design is crucial for replacing the dummy gate with a metal gate electrode, thereby improving device efficiency.

The second patent, "Interconnect Structure and Method for Forming the Same," covers a semiconductor device that comprises a first conductive structure, which extends through isolation layers on a substrate. The inventive aspect includes an insulation layer positioned between the first conductive structure and the isolation layers, allowing for efficient electrical coupling between conductive structures, enhancing overall circuit integrity.

Career Highlights: Shih Wei Bih currently works with Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor industry. Throughout his career, he has consistently focused on innovative approaches to semiconductor fabrication and materials, solidifying his reputation as a trailblazer in the field.

Collaborations: In his professional capacity, Shih Wei Bih has collaborated with esteemed colleagues such as Yen-Yu Chen and Chun-Chih Lin. These collaborations reflect a shared commitment to pushing the boundaries of semiconductor technology, leveraging their collective expertise to drive advancements in the industry.

Conclusion: Shih Wei Bih's contributions to semiconductor innovation illustrate the vital role inventors play in driving technological progress. With a strong portfolio of patents and a collaborative spirit, he continues to pave the way for future advancements within the semiconductor sector. His work not only enhances device performance but also exemplifies the spirit of innovation that defines the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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