The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Dec. 26, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Shih Wei Bih, Taichung, TW;

Sheng-Wei Yeh, Taichung, TW;

Yen-Yu Chen, Taichung, TW;

Wen-Hao Cheng, Hsinchu, TW;

Chih-Wei Lin, Hsinchu, TW;

Chun-Chih Lin, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/525 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/02068 (2013.01); H01L 24/03 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02321 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/035 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05188 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/0535 (2013.01); H01L 2924/05994 (2013.01);
Abstract

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.


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