Sheng-Wei Yeh

Title: Innovations of Sheng-Wei Yeh

Introduction

Sheng-Wei Yeh is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on advancing the design and functionality of semiconductor devices.

Latest Patents

One of his latest patents is titled "Gate structure and semiconductor device having the same." This patent provides a gate structure that includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is positioned over the gate dielectric layer, while the cluster layer, which may consist of an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer, is sandwiched between the metal layer and the gate dielectric layer. Additionally, a semiconductor device incorporating this gate structure is also described.

Another notable patent is "Redistribution layer metallic structure and method." This patent outlines an integrated circuit (IC) structure that includes a semiconductor substrate and an interconnection structure formed on it. The structure features a redistribution layer (RDL) metallic feature that includes a barrier layer, a diffusion layer containing metal and oxygen, and a metallic layer on top of the diffusion layer.

Career Highlights

Sheng-Wei Yeh is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in semiconductor technology. His expertise and contributions have positioned him as a key figure in the industry.

Collaborations

He has collaborated with notable coworkers, including Yen-Yu Chen and Shih Wei Bih, further enhancing the innovative efforts within his team.

Conclusion

Sheng-Wei Yeh's work in semiconductor technology exemplifies the spirit of innovation and advancement in the field. His patents reflect a commitment to improving semiconductor devices, making significant strides in technology.