The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Sep. 28, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shih Wei Bih, Taichung, TW;
Chun-Chih Lin, Taipei, TW;
Sheng-Wei Yeh, Taichung, TW;
Yen-Yu Chen, Taichung, TW;
Chih-Wei Lin, Hsinchu, TW;
Wen-Hao Cheng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure describes an bonding pad formation method that incorporates an tantalum (Ta) conductive layer to block mobile ionic charges generated during the aluminum-copper (AlCu) metal fill deposition. For example, the method includes forming one or more interconnect layers over a substrate and forming a dielectric over a top interconnect layer of the one or more interconnect layers. A first recess is formed in the dielectric to expose a line or a via from the top interconnect layer. A conductive layer is formed in the first recess to form a second recess that is smaller than the first recess. A barrier metal layer is formed in the second recess to form a third recess that is smaller than the second recess. A metal is formed to fill the third recess.