The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Jun. 20, 2014
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chung-Liang Cheng, Changhua County, TW;
Sheng-Wei Yeh, Taichung, TW;
Chia-Hsi Wang, Changhua County, TW;
Wei-Jen Chen, Taichung, TW;
Yen-Yu Chen, Taichung, TW;
Chang-Sheng Lee, Shin-Chu, TW;
Wei Zhang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a method for controlling a semiconductor deposition operation. The method includes (i) identifying a first target lifetime in a physical vapor deposition (PVD) system; (ii) inputting the first target lifetime into a processor; (iii) outputting, by the processor, a plurality of first operation parameters according to a plurality of compensation curves; and (iv) performing the first operation parameters in the PVD system. The first operation parameters includes, but not limited to, an RF power tuning, a DC voltage tuning, a target to chamber pedestal spacing tuning, an AC bias tuning, an impedance tuning, a reactive gas flow tuning, an inert gas flow tuning, a chamber pedestal temperature tuning, or a combination thereof.