The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Aug. 08, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/3105 (2013.01); H01L 21/31105 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/02164 (2013.01); H01L 21/02252 (2013.01); H01L 21/31116 (2013.01); H01L 21/76843 (2013.01);
Abstract
A semiconductor device includes: a first conductive structure having sidewalls and a bottom surface, the first conductive structure extending through one or more isolation layers formed on a substrate; and an insulation layer disposed between at least one of the sidewalls of the first conductive structure and respective sidewalls of the one or more isolation layers, wherein the first conductive structure is electrically coupled to a second conductive structure through at least the bottom surface.