IDiyas

For the Inventor, By the Inventor

Beijing, China

Shibing Long

USPTO Granted Patents = 20 

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:

goldMedal20 out of 3,086 
 
Chinese Academy of Sciences
 patents

Years Active: 2013-2025

where 'Filed Patents' based on already Granted Patents

20 patents (USPTO):
1. 12423564 - Neuron circuit and neural network circuit (2025-09-23),
2. 11245074 - Resistance random access memory and method for fabricating the same (2022-02-08),
3. 11223013 - Conductive bridge semiconductor component and manufacturing method therefor (2022-01-11),
4. 11189345 - Method for implementing logic calculation based on a crossbar array structure of resistive switching device (2021-11-30),
5. 10720578 - Self-gating resistive storage device having resistance transition layer in vertical trench in stacked structure of insulating dielectric layers and electrodes (2020-07-21),
6. 10700276 - Preparation method of Cu-based resistive random access memory, and memory (2020-06-30),
7. 10665780 - Selection device for use in bipolar resistive memory and manufacturing method therefor (2020-05-26),
8. 10608177 - Self-gated RRAM cell and method for manufacturing the same (2020-03-31),
9. 10418549 - Method for evaluating thermal effect and reducing thermal crosstalk of three-dimensional integrated resistive switching memory (2019-09-17),
10. 10312439 - Manufacturing method for a nonvolatile resistive switching memory device (2019-06-04),
11. 10305035 - Preparation method of Cu-based resistive random access memory (2019-05-28),
12. 10297748 - Three-terminal atomic switching device and method of manufacturing the same (2019-05-21),
13. 10134983 - Nonvolatile resistive switching memory device and manufacturing method thereof (2018-11-20),
14. 9779836 - Method for controlling magnetic multi-domain state (2017-10-03),
15. 9508776 - Gating device cell for cross array of bipolar resistive memory cells (2016-11-29),

Title: The Pioneer of Technology: Shibing Long's Innovation Journey

Introduction:

Shibing Long, a visionary inventor based in Beijing, China, has left an indelible mark in the realm of technology with his passion for innovation and relentless pursuit of pushing boundaries. With a total of 19 patents to his name, Shibing Long continues to inspire future generations of inventors to dream big and shape a better tomorrow.

Latest Patents:

Shibing Long's recent patents include groundbreaking inventions such as Resistance Random Access Memory (RRAM) and its fabrication method. The RRAM features a nitrogen-containing tantalum oxide resistance-switching layer, offering a low activation voltage and high on-off ratio. Another notable patent is the Conductive Bridge Semiconductor Component, which enables ultra-low power nonvolatile memory and high driving-current volatile selectors with controllable polarity.

Career Highlights:

Shibing Long is a key figure at the Institute of Microelectronics, Chinese Academy of Sciences, where his innovative work has garnered acclaim in the tech community. His expertise in semiconductor devices and memory technologies has led to significant advancements in the field, positioning him as a pioneer in his domain.

Collaborations:

Collaborating with esteemed colleagues such as Ming Liu and Hangbing Lv., Shibing Long has fostered a culture of innovation and knowledge sharing. Together, they have worked on cutting-edge projects that have pushed the boundaries of what is possible in the world of technology.

Conclusion:

In conclusion, Shibing Long's unwavering commitment to innovation and his groundbreaking inventions have solidified his position as a true pioneer in the world of technology. His work serves as a testament to the transformative power of human creativity and ingenuity, inspiring others to think boldly and strive for excellence in their pursuits.

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