Shibing Long

This inventor holds 20 USPTO granted patents and 5 published patent applications, primarily in Resistive Memory Technology. Top assignee: Chinese Academy of Sciences. Active years: 2013-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shibing Long. Retrieved from https://idiyas.com/inventor/shibing-long

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 20 (Patent Applications = 5)

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 15(Granted Patents)

Company Filing History:

20 out of 3,364

Chinese Academy of Sciences

patents

Years Active: 2013-2025

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Areas of Expertise:

Neuron Circuit

Neural Network Circuit

Resistive Random Access Memory

Logic Calculation

Crossbar Array

Thermal Crosstalk

Nonvolatile Memory

Conductive Bridge

Atomic Switching Device

Bipolar Resistive Memory

Memory Fabrication

Metal Oxide Memory

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12423564 - Neuron circuit and neural network circuit (2025-09-23),

2. 11245074 - Resistance random access memory and method for fabricating the same (2022-02-08),

3. 11223013 - Conductive bridge semiconductor component and manufacturing method therefor (2022-01-11),

4. 11189345 - Method for implementing logic calculation based on a crossbar array structure of resistive switching device (2021-11-30),

5. 10720578 - Self-gating resistive storage device having resistance transition layer in vertical trench in stacked structure of insulating dielectric layers and electrodes (2020-07-21),

6. 10700276 - Preparation method of Cu-based resistive random access memory, and memory (2020-06-30),

7. 10665780 - Selection device for use in bipolar resistive memory and manufacturing method therefor (2020-05-26),

8. 10608177 - Self-gated RRAM cell and method for manufacturing the same (2020-03-31),

9. 10418549 - Method for evaluating thermal effect and reducing thermal crosstalk of three-dimensional integrated resistive switching memory (2019-09-17),

10. 10312439 - Manufacturing method for a nonvolatile resistive switching memory device (2019-06-04),

11. 10305035 - Preparation method of Cu-based resistive random access memory (2019-05-28),

12. 10297748 - Three-terminal atomic switching device and method of manufacturing the same (2019-05-21),

13. 10134983 - Nonvolatile resistive switching memory device and manufacturing method thereof (2018-11-20),

14. 9779836 - Method for controlling magnetic multi-domain state (2017-10-03),

15. 9508776 - Gating device cell for cross array of bipolar resistive memory cells (2016-11-29),

Title: The Pioneer of Technology: Shibing Long's Innovation Journey

Introduction:

Shibing Long, a visionary inventor based in Beijing, China, has left an indelible mark in the realm of technology with his passion for innovation and relentless pursuit of pushing boundaries. With a total of 19 patents to his name, Shibing Long continues to inspire future generations of inventors to dream big and shape a better tomorrow.

Latest Patents:

Shibing Long's recent patents include groundbreaking inventions such as Resistance Random Access Memory (RRAM) and its fabrication method. The RRAM features a nitrogen-containing tantalum oxide resistance-switching layer, offering a low activation voltage and high on-off ratio. Another notable patent is the Conductive Bridge Semiconductor Component, which enables ultra-low power nonvolatile memory and high driving-current volatile selectors with controllable polarity.

Career Highlights:

Shibing Long is a key figure at the Institute of Microelectronics, Chinese Academy of Sciences, where his innovative work has garnered acclaim in the tech community. His expertise in semiconductor devices and memory technologies has led to significant advancements in the field, positioning him as a pioneer in his domain.

Collaborations:

Collaborating with esteemed colleagues such as Ming Liu and Hangbing Lv., Shibing Long has fostered a culture of innovation and knowledge sharing. Together, they have worked on cutting-edge projects that have pushed the boundaries of what is possible in the world of technology.

Conclusion:

In conclusion, Shibing Long's unwavering commitment to innovation and his groundbreaking inventions have solidified his position as a true pioneer in the world of technology. His work serves as a testament to the transformative power of human creativity and ingenuity, inspiring others to think boldly and strive for excellence in their pursuits.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

5 patents pending: