The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Sep. 24, 2013
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Qi Liu, Beijing, CN;
Ming Liu, Beijing, CN;
Shibing Long, Beijing, CN;
Hangbing Lv, Beijing, CN;
Yan Wang, Beijing, CN;
Abstract
A gating device cell for a cross array of bipolar resistive memory cells comprises an n-p diode and a p-n diode, wherein the n-p diode and the p-n diode have opposite polarities and are connected in parallel, such that the gating device cell exhibits a bidirectional rectification feature. The gating device cell exhibits the bidirectional rectification feature, that is, it can provide a relatively high current density at any voltage polarity in its ON state, and also a relatively great rectification ratio (R/R) under a read voltage. Therefore, it is possible to suppress read crosstalk in the cross array of bipolar resistive memory cells to avoid misreading, thereby solving the problem that a conventional rectifier diode is only applicable to a cross array of unipolar resistive memory cells.