IDiyas

For the Inventor, By the Inventor

Beijing, China

Hangbing Lv

USPTO Granted Patents = 31 

Average Co-Inventor Count = 5.1

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:

goldMedal31 out of 3,086 
 
Chinese Academy of Sciences
 patents

Years Active: 2014-2025

where 'Filed Patents' based on already Granted Patents

31 patents (USPTO):
1. 12456516 - Method for operating memory cell and resistive random access memory, and electronic device (2025-10-28),
2. 12444463 - Memory cell structure, memory array structure, and voltage biasing method (2025-10-14),
3. 12431175 - Self-reference storage structure and in-memory computing circuit (2025-09-30),
4. 12423564 - Neuron circuit and neural network circuit (2025-09-23),
5. 12406177 - Afferent neuron circuit and mechanoreceptive system (2025-09-02),
6. 12393831 - Artificial sensory nervous circuit and manufacturing method thereof (2025-08-19),
7. 12260911 - Memory circuit structure and method of operating memory circuit structure (2025-03-25),
8. 12260902 - Complementary storage unit and method of preparing the same, and complementary memory (2025-03-25),
9. 12205630 - Symmetric memory cell and BNN circuit (2025-01-21),
10. 12124945 - Neural network operation device (2024-10-22),
11. 12002500 - Writing method and erasing method of fusion memory (2024-06-04),
12. 11790968 - Spintronic device, SOT-MRAM storage cell, storage array and in-memory computing circuit (2023-10-17),
13. 11776607 - Fusion memory (2023-10-03),
14. 11641787 - Self-rectifying resistive memory and fabrication method thereof (2023-05-02),
15. 11245074 - Resistance random access memory and method for fabricating the same (2022-02-08),

Title: Hangbing Lv: A Pioneer in Memory Cell and Neural Network Technology

Introduction

Hangbing Lv is a renowned inventor based in Beijing, China, known for his significant contributions to the fields of memory cells and neural network operation devices. With a total of 23 patents to his name, he continues to push the boundaries of technology and innovation.

Latest Patents

Among his latest innovations are the "Symmetric Memory Cell" and the "Neural Network Operation Device." The symmetric memory cell features a first and second complementary structure, which are symmetrically connected. This design allows the memory cell to store weight values of either 1 or 0, utilizing carefully arranged control transistors. His neural network operation device comprises an operation array of units featuring a unique threshold voltage adjustment layer, designed for optimizing weight values through ferroelectric materials. These patents reflect his commitment to advancing technology for more efficient computing systems.

Career Highlights

Hangbing Lv works at the Institute of Microelectronics at the Chinese Academy of Sciences. His extensive research and innovation in microelectronics have earned him recognition within the academic and technological community. His work is crucial in driving forward the capabilities of modern electronic devices and systems.

Collaborations

Throughout his career, Hangbing has collaborated with esteemed colleagues, including Ming Liu and Qi Liu. These partnerships have fostered an environment of innovation, leading to groundbreaking advancements in semiconductor technology and neural network architectures.

Conclusion

Hangbing Lv stands out as a key figure in the field of microelectronics, with his innovative patents paving the way for future advancements. His work not only enhances current technologies but also sets the foundation for new inventions that will shape the future of computing and artificial intelligence.

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