The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Apr. 14, 2020
Applicant:
Institute of Microelectronics, Chinese Academy of Sciences, Bijing, CN;
Inventors:
Hangbing Lv, Beijing, CN;
Jianguo Yang, Beijing, CN;
Xiaoxin Xu, Beijing, CN;
Ming Liu, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0021 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/003 (2013.01); G11C 2213/79 (2013.01);
Abstract
Provided are a memory cell structure, a memory array structure, and a voltage biasing method. The memory cell structure includes: a substrate layer, a well layer and a transistor. The substrate layer is configured to support the memory cell structure; the well layer is embedded in the substrate layer, an upper surface of the well layer is flush with an upper surface of the substrate layer, and a transistor is arranged on the well layer.