Beijing, China

Xiaoxin Xu

USPTO Granted Patents = 10 

Average Co-Inventor Count = 5.2

ph-index = 1


Company Filing History:


Years Active: 2020-2025

where 'Filed Patents' based on already Granted Patents

10 patents (USPTO):

Title: **Xiaoxin Xu: Pioneering Innovator in Memory Circuit Technology**

Introduction

Xiaoxin Xu is an innovative inventor based in Beijing, China, recognized for his significant contributions to memory circuit structures and reconfigurable devices. With a total of eight patents to his name, Xu continues to push the boundaries of technology, influencing the future of electronic memory systems.

Latest Patents

Among his latest inventions, Xu has developed a groundbreaking memory circuit structure and method of operating it. This memory circuit includes a storage array comprising at least two storage units, connected to a decoder facilitating communication between a bit line and a word line. The innovation features a programming circuit capable of generating voltage or current pulses, complemented by a polarity switching circuit which enables the transition between voltage and current programming modes during set and reset operations. Additionally, a detection circuit is included to monitor signals and ensure efficient operations within the storage array.

Xu's other notable invention is a reconfigurable Physical Unclonable Function (PUF) device based on fully electric field-controlled domain wall motion. This device incorporates advanced components such as a voltage control layer and magnetic tunnel junctions (MTJ). By manipulating the energy potential well within the ferromagnetic free layer, Xu’s design allows for the generation and stabilization of magnetic domain walls, thus achieving either a high resistance or a low resistance state based on the applied voltage.

Career Highlights

Currently, Xiaoxin Xu is affiliated with the Chinese Academy of Sciences, where he engages in cutting-edge research and development in the field of electronic memory technologies. His work is influential in both academic and practical realms, paving the way for future innovations in memory circuits.

Collaborations

Xu collaborates closely with esteemed colleagues, including Hangbing Lv and Ming Liu. Together, they contribute to advancements in technology, enhancing the capabilities of memory systems and exploring new approaches towards electronic device design.

Conclusion

Xiaoxin Xu's inventive prowess exemplifies the spirit of modern innovation in electronics. Through his patents and collaborative efforts, he demonstrates a commitment to advancing technology, particularly in the realm of memory circuits. His work not only impacts the technological landscape in China but also holds potential implications for global advancements in electronic devices.

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