The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Jan. 25, 2021
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Xiaoxin Xu, Beijing, CN;
Jie Yu, Beijing, CN;
Danian Dong, Beijing, CN;
Zhaoan Yu, Beijing, CN;
Hangbing Lv, Beijing, CN;
Abstract
A method for operating a memory cell and a resistive random access memory, and an electronic device are provided. The method for operating a memory cell includes: performing a writing operation and an erasing operation on a resistive device. The writing operation includes: applying a writing voltage on the resistive device; determining whether a resistance value of the resistive device reaches a low resistance state threshold; and applying a constant current to the resistive device in response to the resistance value of the resistive device reaching the low resistance state threshold, wherein a voltage value generated by the constant current on the resistive device is smaller than a voltage value of the writing voltage.