The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Jan. 28, 2019
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Hangbing Lv, Beijing, CN;

Xiaoxin Xu, Beijing, CN;

Qing Luo, Beijing, CN;

Ming Liu, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/065 (2023.01); G11C 11/22 (2006.01); G11C 11/54 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
G06N 3/065 (2023.01); G11C 11/223 (2013.01); G11C 11/2273 (2013.01); G11C 11/54 (2013.01); H01L 29/516 (2013.01); H01L 29/78391 (2014.09);
Abstract

Disclosed is a neural network operation device, including: an operation array including operation units, wherein each operation unit includes: a source terminal, a drain terminal, a gate electrode, a threshold voltage adjustment layer under the gate electrode, and a channel region extending between a source region and a drain region, the threshold voltage adjustment layer is located on the channel region. The gate electrodes of each column of operation units of the operation array are connected together, and each column is used to adjust a weight value according to a threshold voltage adjusted by the threshold voltage adjustment layer. The threshold voltage adjustment layer is a ferroelectric layer.


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