Qing Luo

Title: Qing Luo: Innovator in Memory Technology

Introduction

Qing Luo is a prominent inventor based in Beijing, China, known for his significant contributions to memory technology. With a total of 15 patents to his name, he has made remarkable advancements in the field of complementary storage units and memory circuits.

Latest Patents

Among his latest patents are "Complementary storage unit and method of preparing the same" and "Complementary memory - A complementary storage unit and a method of preparing the same, and a complementary memory." These innovations focus on a complementary storage unit that includes a control transistor, a pull-up diode, and a pull-down diode. The control transistor is designed to manage the reading and writing processes of the storage unit. The pull-up diode connects to a positive selection line, while the pull-down diode connects to a negative selection line, both symmetrically arranged to control high and low-level inputs. Additionally, he has developed a "symmetric memory cell and BNN circuit," which features a first and second complementary structure that are symmetrically connected, allowing for efficient storage of weight values.

Career Highlights

Qing Luo has worked with esteemed organizations such as the Chinese Academy of Sciences and Beijing Didi Infinity Technology and Development Co., Ltd. His work in these institutions has allowed him to push the boundaries of memory technology and contribute to innovative solutions in the industry.

Collaborations

Throughout his career, Qing Luo has collaborated with notable colleagues, including Ming Liu and Hangbing Lv. These partnerships have fostered a creative environment that has led to groundbreaking advancements in memory technology.

Conclusion

Qing Luo's contributions to the field of memory technology through his patents and collaborations highlight his role as a leading inventor. His innovative work continues to influence the development of advanced memory systems.