The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Jan. 28, 2019
Applicant:
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Inventors:
Hangbing Lv, Beijing, CN;
Qing Luo, Beijing, CN;
Xiaoxin Xu, Beijing, CN;
Tiancheng Gong, Beijing, CN;
Ming Liu, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 29/78 (2006.01); G06N 3/063 (2023.01); H01L 29/51 (2006.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
G11C 11/223 (2013.01); G06N 3/063 (2013.01); H01L 29/516 (2013.01); H01L 29/78391 (2014.09); H10B 51/20 (2023.02); H10B 51/30 (2023.02);
Abstract
The present disclosure provides a fusion memory including a plurality of memory cells, wherein each memory cell of the plurality of memory cells includes: a bulk substrate; a source and a drain on the bulk substrate; a channel extending between the source and the drain; a ferroelectric layer on the channel; and a gate on the ferroelectric layer.