The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jul. 09, 2020
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, CN;
Qing Luo, Beijing, CN;
Pengfei Jiang, Beijing, CN;
Hangbing Lv, Beijing, CN;
Yuan Wang, Beijing, CN;
Ming Liu, Beijing, CN;
Abstract
A HfO-based ferroelectric capacitor and a preparation method therefor, and a HfO-based ferroelectric memory, relating to the technical field of microelectronics. The purpose of enlarging the memory window of the ferroelectric memory is achieved by inserting an AlOintercalation layer having a coefficient of thermal expansion smaller than TiN between a dielectric layer and an upper electrode (TiN) of the ferroelectric capacitor. The HfO-based ferroelectric capacitor comprises a substrate layer, a lower electrode, a dielectric layer, an AlOintercalation layer, an upper electrode and a metal protection layer from bottom to top. The memory window can be increased, information misreading is effectively prevented, and therefore, the reliability of the memory is improved.