The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Dec. 14, 2020
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Xiaoxin Xu, Beijing, CN;
Xiaoyan Li, Beijing, CN;
Danian Dong, Beijing, CN;
Jie Yu, Beijing, CN;
Hangbing Lv, Beijing, CN;
Abstract
The present disclosure provides a resistive random access memory and a method of preparing the same. The resistive random access memory includes: a resistive layer, an upper electrode and a barrier structure. The resistive layer is arranged on a substrate; the upper electrode is arranged on the resistive layer; and the barrier structure is arranged between the resistive layer and the upper electrode, and the barrier structure is configured for electrons to pass through a conduction band of the barrier structure when a device performs an erasing operation, so as to avoid forming of a defect in the resistive layer and causing a reverse breakdown of the resistive layer.