The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Dec. 26, 2014
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Abstract
There is provided a three-terminal atomic switching device and a method of manufacturing the same, which belongs to the field of microelectronics manufacturing and memory technology. The three-terminal atomic switching device includes: a stack structure including a source terminal and a drain terminal; a vertical trench formed by etching the stack structure; an MXYchannel layer formed on an inner wall and a bottom of the vertical trench; and a control terminal formed on a surface of the MXYchannel layer, wherein the control terminal fills the vertical trench. The source terminal resistance and the drain terminal resistance are controlled by the control terminal. The invention is based on the three-terminal atomic switching device, and realizes high switching ratio characteristic, simple structure, easy integration, high density and low cost due to high non-linearity of the source-drain resistance with respect to the control terminal voltage, and thus can be used in a gated device in a cross-array structure to inhibit a crosstalk phenomenon caused by the leakage current. The three-terminal atomic switching device proposed by the invention is suitable for a planar stacked cross-array structure and a vertical cross-array structure, so as to realize high-density three-dimensional storage.