The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Mar. 12, 2014
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Chong Bi, Beijing, CN;

Shibing Long, Beijing, CN;

Ming Liu, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/14 (2006.01); G11C 19/08 (2006.01);
U.S. Cl.
CPC ...
G11C 19/0858 (2013.01); G11C 19/085 (2013.01);
Abstract

The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an additional external magnetic field having a magnetic field strength of 0 to 4×105 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and keeps stable when the current is removed. Such a method may be used for magnetic memory or spin-logic device to implement a nonvolatile multi-valued storage, multi-bits logic operation, or neuromorphic computing.


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