Sheyang Ning

This inventor holds 24 USPTO granted patents and 17 published patent applications, primarily in Memory Device Programming. Top assignee: Micron Technology Incorporated. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheyang Ning. Retrieved from https://idiyas.com/inventor/sheyang-ning

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 24 (Patent Applications = 17)

% Patents Active = 87.5

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 7(Granted Patents)

Company Filing History:

24 out of 39,294

Micron Technology Incorporated

patents

Years Active: 2022-2026

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Areas of Expertise:

Memory Device

Voltage Selection

Data Storage

NAND Memory

Dielectric Stress

Programming Techniques

Memory Arrays

Bit Erase

Cell Capacitor Structures

Dynamic Start Voltage

Data States

Memory Sub-system

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12710884 - PROGRAM VOLTAGE SELECTION DURING ALL LEVELS PROGRAMMING OF A MEMORY DEVICE (2026-08-18),

2. 12700456 - Controlling pillar voltage using wordline boost voltage and select gate leakage during all levels programming of a memory device (2026-08-04),

3. 12648126 - Memory cell capacitor structures for three-dimensional memory arrays (2026-06-02),

4. 12469565 - Fast bit erase for upper tail tightening of threshold voltage distributions (2025-11-11),

5. 12444453 - Volatile data storage in NAND memory (2025-10-14),

6. 12431198 - Charge loss acceleration during programming of memory cells in a memory sub-system (2025-09-30),

7. 12347485 - Establishing bitline, wordline and boost voltages to manage a maximum program voltage level during all levels programming of a memory device (2025-07-01),

8. 12260914 - Level shifting in all levels programming of a memory device in a memory sub-system (2025-03-25),

9. 12254927 - In-line programming adjustment of a memory cell in a memory sub-system (2025-03-18),

10. 12224012 - All level coarse/fine programming of memory cells (2025-02-11),

11. 12211552 - Concurrent slow-fast memory cell programming (2025-01-28),

12. 12141445 - Managing dielectric stress of a memory device using controlled ramping slopes (2024-11-12),

13. 12112819 - Apparatus for determining memory cell data states (2024-10-08),

14. 12014778 - In-line programming adjustment of a memory cell in a memory sub-system (2024-06-18),

15. 11961566 - Fast bit erase for upper tail tightening of threshold voltage distributions (2024-04-16),

Title: Sheyang Ning: Pioneering Inventor from San Jose

Introduction: Sheyang Ning is a distinguished inventor based in San Jose, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Sheyang Ning holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Sheyang Ning has worked with leading tech companies, spearheading research and development projects that have led to significant advancements in the industry.

Collaborations: Throughout his career, Sheyang Ning has collaborated with top researchers, engineers, and scientists, fostering a culture of innovation and creativity in the projects he undertakes.

Conclusion: Sheyang Ning's passion for innovation and his relentless pursuit of technological excellence continue to inspire the next generation of inventors and researchers in the ever-evolving landscape of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

17 patents pending: