The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Apr. 03, 2024
Micron Technology, Inc., Boise, ID (US);
Sheyang Ning, San Jose, CA (US);
Lawrence Celso Miranda, San Jose, CA (US);
Jeffrey S. Mcneil, Nampa, ID (US);
Tomoko Ogura Iwasaki, San Jose, CA (US);
Yeang Meng Hern, Singapore, SG;
Lee-Eun Yu, San Jose, CA (US);
Albert Fayrushin, Boise, ID (US);
Fulvio Rori, Boise, ID (US);
Justin Bates, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Control logic in a memory device initiates a program operation including a first phase including applying a ramping voltage level to a set of wordlines of a memory device to boost a set of pillar voltages and a second phase including applying a set of programming pulses to a wordline associated with one or more memory cells of the memory device to be programmed to a set of programming levels, wherein each programming level of the set of programming levels is programmed by each programming pulse. During the first phase of the program operation, a first voltage applied to a drain-side select line (SGD) is adjusted from a first SGD voltage level to a second SGD voltage level.