This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Micron Technology Incorporated. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Lee-eun Yu: Innovator in Memory Device Technology
Introduction
Lee-eun Yu is a prominent inventor based in San Jose, California. He has made significant contributions to the field of memory device technology. His innovative approach has led to the development of a unique patent that enhances the programming of memory devices.
Latest Patents
Lee-eun Yu holds a patent titled "Controlling pillar voltage using wordline boost voltage and select gate leakage during all levels programming of a memory device." This patent describes a control logic in a memory device that initiates a program operation. The operation includes a first phase where a ramping voltage level is applied to a set of wordlines to boost pillar voltages. The second phase involves applying programming pulses to a wordline associated with memory cells to be programmed to specific levels. This innovative method allows for precise control during the programming process.
Career Highlights
Lee-eun Yu is currently employed at Micron Technology Incorporated, a leading company in semiconductor manufacturing. His work focuses on advancing memory technology, which is crucial for modern computing applications. With a total of 1 patent, he has established himself as a key player in the industry.
Collaborations
Some of Lee-eun Yu's notable coworkers include Sheyang Ning and Lawrence Celso Miranda. Their collaborative efforts contribute to the innovative environment at Micron Technology.
Conclusion
Lee-eun Yu's contributions to memory device technology exemplify the impact of innovation in the semiconductor industry. His patent reflects a commitment to enhancing the efficiency and effectiveness of memory programming.