The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Apr. 16, 2024
Micron Technology, Inc., Boise, ID (US);
Ratna Priyanka Sistla, Meridian, ID (US);
Dan Xu, Sunnyvale, CA (US);
Tomoko Ogura Iwasaki, San Jose, CA (US);
Caixia Yang, Boise, ID (US);
Lee-Eun Yu, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory device includes a memory array configured as quad-level cell (QLC) memory and a control logic operatively coupled to the memory array. The control logic identifies a first two bits of particular pages of a QLC logical state. The control logic causes memory cells of the memory array to be coarse programmed with a threshold voltage distribution of a multi-level cell (MLC) logical state corresponding to the first two bits. The control logic reads the MLC logical state from the memory cells and a second two bits from a cache buffer to determine the QLC logical state. The control logic causes the memory cells to be further coarse programmed with a QLC threshold voltage distribution corresponding to the QLC logical state.