The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Feb. 11, 2022
Micron Technology, Inc., Boise, ID (US);
Sheyang Ning, San Jose, CA (US);
Lawrence Celso Miranda, San Jose, CA (US);
Zhengyi Zhang, San Jose, CA (US);
Tomoko Ogura Iwasaki, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Control logic in a memory device causes a first programming pulse of a set of programming pulses associated with a programming algorithm to be applied to a wordline associated with a memory cell to be programmed to a first target voltage level representing a first programming level. The control logic further performs a program verify operation corresponding to the first programming level to determine that a threshold voltage of the memory cell exceeds the first target voltage level. The control logic further causes first data to be stored in a cache, the first data indicating that the threshold voltage of the memory cell exceeds the first target voltage level. The cache is caused to be refreshed to store second data indicating that the threshold voltage of the memory cell is less than the first target voltage level. In view of the second data, a further programming pulse is caused to be applied to the wordline associated with the memory cell at a reduced programming stress level.