Mountain View, CA, United States of America

Zhengyi Zhang

This inventor holds 25 USPTO granted patents and 5 EPO patents, primarily in Non-Volatile Memory. Top assignees: Sandisk Technologies Inc., Micron Technology Incorporated. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhengyi Zhang. Retrieved from https://idiyas.com/inventor/zhengyi-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 9

Forward Citations = 192(Granted Patents)


Location History:

  • Mountain View, CA (US) (2017 - 2020)
  • San Jose, CA (US) (2016 - 2024)

Company Filing History:


Years Active: 2016-2025

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Areas of Expertise:
Memory Cells
Data Destruction
Charge Loss
Programming Adjustment
Multi-State Programming
Program Disturb
Threshold Voltage
Data Recovery
Temperature Change
Voltage Adjustment
NAND Strings
Erase Operation
25 patents (USPTO):Explore Patents

Title: Innovations by Zhengyi Zhang in Memory Technology

Introduction

Zhengyi Zhang, located in Mountain View, California, is an accomplished inventor in the field of memory technology, with an impressive portfolio of 23 patents to his name. His work primarily focuses on optimizing memory cell programming and verification processes, significantly advancing the efficiency and reliability of memory devices.

Latest Patents

Among his latest patents is a method for in-line programming adjustment of a memory cell in a memory sub-system. This invention involves control logic in a memory device that applies a specific programming pulse to a wordline associated with a memory cell. The process incorporates a program verify operation to ensure the threshold voltage of the memory cell exceeds the target voltage level. The further programming pulse applies a reduced programming stress level based on data stored in a cache regarding the memory cell's threshold voltage.

Another notable patent by Zhengyi focuses on detrapping electrons to prevent quick charge loss during program verify operations in a memory device. This innovation employs processing logic to initiate a program operation, which involves a program phase and a subsequent program verify phase. During the verify phase, a negative voltage is applied to a selected wordline linked to a memory cell, enhancing the programming process's overall efficacy.

Career Highlights

Zhengyi Zhang has made significant contributions to the field while working with prominent organizations such as SanDisk Technologies Inc. and Micron Technology Incorporated. His experiences at these companies have played a crucial role in shaping his expertise and innovative capacity in memory technology.

Collaborations

Throughout his career, Zhengyi has collaborated with talented professionals in the industry, including Yingda Dong and Ching-Huang Lu. These partnerships have fostered a vibrant exchange of ideas and have contributed to the development of groundbreaking technologies in memory systems.

Conclusion

Zhengyi Zhang stands as a notable figure in the realm of memory technology innovation. His 23 patents highlight his dedication to improving memory cell programming and verification processes. Through his collaborations and experience in esteemed companies, Zhengyi continues to impact the industry significantly, driving advancements that benefit the technology landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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