The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Jul. 26, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Zhengyi Zhang, San Jose, CA (US);

Dan Xu, Sunnyvale, CA (US);

Tomoko Ogura Iwasaki, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/28 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01);
Abstract

Apparatus having a string of series-connected memory cells, a plurality of access lines with each access line of the plurality of access lines connected to a control gate of a respective memory cell of the plurality of memory cells, and a controller for access of the string of series-connected memory cells and configured to cause the memory to increase a threshold voltage of a particular memory cell of the string of series-connect memory cells to a voltage level higher than a predetermined pass voltage to be received by a control gate of the particular memory cell during a read operation on the string of series-connected memory cells, and concurrently change a respective data state of each memory cell of a plurality of memory cells of the string of series-connected memory cells.


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