The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
May. 10, 2019
Sandisk Technologies Llc, Addison, TX (US);
Ching-Huang Lu, Fremont, CA (US);
Zhengyi Zhang, San Jose, CA (US);
SanDisk Technologies LLC, Addison, TX (US);
Abstract
Program disturb is suppressed during a program recovery phase of a program operation in a memory device. The duration of the recovery phase can be increased when the risk of program disturb is greater due to factors such as temperature, the position of the selected word line, the number of program-erase cycles and the program pulse magnitude. In other approaches, the risk of program disturb is reduced by providing an early ramp down of the voltages of the drain-side word line relative to a ramp down of the voltages of the source-side word lines, providing an early ramp down of the bit line voltage of the inhibited NAND strings relative to the ramp down of the select gate voltage or setting a lower recovery voltage for the source-side word lines relative to the recovery voltage of the drain-side word lines.