The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Dec. 21, 2018
Sandisk Technologies Llc, Addison, TX (US);
Hong-Yan Chen, San Jose, CA (US);
Yingda Dong, Los Altos, CA (US);
Zhengyi Zhang, Mountain View, CA (US);
SanDisk Technologies LLC, Addison, TX (US);
Abstract
Techniques for reducing neighbor word line interference (NWI) of memory cells which are formed in a two-tier stack having a lower tier and an upper tier separated by an interface. In one approach, an upward word line programming order is used for a top portion of the top tier, and a downward word line programming order is used for a bottom portion of the top tier and for the bottom tier. Additionally, for memory cells which receive NWI from both adjacent word lines, options include programming fewer bits per cell, performing multi-pass programming and/or use lower verify voltages. Options also include increasing a control gate length of the memory cells and increasing a height of a dielectric region adjacent to the memory cells.