The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Oct. 05, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Sheyang Ning, San Jose, CA (US);
Lawrence Miranda, San Jose, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/00 (2006.01); G06F 3/06 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0616 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/0483 (2013.01);
Abstract
Control logic in a memory device causes a first set of pulses corresponding to a first voltage ramp slope level to be applied to a memory cell during a first time interval of an execution of a memory access operation. In response to determining a transition time has been reached, the control logic causes a second set of pulses corresponding to a second voltage ramp slope level to be applied to the memory cell during a second time interval of the execution of the memory access operation, wherein the first voltage ramp slope level and the second voltage ramp slope level are different.