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Hsinchu, Taiwan

Sheng-Hsing Yang

USPTO Granted Patents = 48

Average Co-Inventor Count = 1.3

ph-index = 10

Forward Citations = 508(Granted Patents)

Location History:

Hsimchu, TW (1994)
Hsinchu, TW (1994 - 2005)

Company Filing History:

47 out of 7,082

United Microelectronics Corp.

Chung Shan Institute of Science and Technology, Armanents Bureau, M.n.d.

Years Active: 1994-2005

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Areas of Expertise:

High-Voltage Devices

Bipolar Junction Transistor

Metal Gate CMOS

Electrically Erasable Memory

Lateral Bipolar Transistor

Integrated Circuits

Electrostatic Discharge Protection

Semiconductor Fabrication

Multi-Layer Metallization

VDMOS Transistor

Capacitance Measurement

Reliability Testing

48 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6867732 - Embedded multi-functional preprocessing input data buffer in radar system (2005-03-15),

2. 6306711 - Method of fabricating a high-voltage lateral double diffused metal oxide semiconductor (2001-10-23),

3. 6269315 - Reliability testing method of dielectric thin film (2001-07-31),

4. 6255809 - Method for measuring capacitance of passive device region (2001-07-03),

5. 6205013 - Multi-layer metallization capacitive structure for reduction of the simultaneous switching noise in integrated circuits (2001-03-20),

6. 6174760 - Method of improving vertical BJT gain (2001-01-16),

7. 6165852 - Method of fabricating integration of high-voltage devices and (2000-12-26),

8. 6153913 - Electrostatic discharge protection circuit (2000-11-28),

9. 6063674 - Method for forming high voltage device (2000-05-16),

10. 6040601 - High voltage device (2000-03-21),

11. 5966608 - Method of forming high voltage device (1999-10-12),

12. 5894155 - Metal gate high voltage integrated circuit/process (1999-04-13),

13. 5686347 - Self isolation manufacturing method (1997-11-11),

14. 5624857 - Process for fabricating double well regions in semiconductor devices (1997-04-29),

15. 5614421 - Method of fabricating junction termination extension structure for (1997-03-25),

Title: Sheng-Hsing Yang: Innovator from Hsinchu

Introduction: Sheng-Hsing Yang is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Sheng-Hsing Yang holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Sheng-Hsing Yang has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Sheng-Hsing Yang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing.

Conclusion: Sheng-Hsing Yang's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventors.

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