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Sheng-Hsing Yang

This inventor holds 48 USPTO granted patents, primarily in High-Voltage Semiconductor. Top assignees: United Microelectronics Corp., Chung Shan Institute of Science and Technology, Armanents Bureau, M.n.d.. Active years: 1994-2005.

USPTO Granted Patents = 48

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 10

Forward Citations = 509(Granted Patents)

Location History:

Hsimchu, TW (1994)
Hsinchu, TW (1994 - 2005)

Company Filing History:

47 out of 7,255

United Microelectronics Corp.

patents

1 out of 1

Chung Shan Institute of Science and Technology, Armanents Bureau, M.n.d.

patent

Years Active: 1994-2005

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Areas of Expertise:

High-Voltage Device

Bipolar Junction Transistor

Electrostatic Discharge Protection

CMOS Transistor

Lateral Bipolar Transistor

Memory Device

LDMOS Transistor

Metal Gate

Integrated Circuit

Fabrication Process

Dielectric Thin Film

Simultaneous Switching Noise

48 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6867732 - Embedded multi-functional preprocessing input data buffer in radar system (2005-03-15),

2. 6306711 - Method of fabricating a high-voltage lateral double diffused metal oxide semiconductor (2001-10-23),

3. 6269315 - Reliability testing method of dielectric thin film (2001-07-31),

4. 6255809 - Method for measuring capacitance of passive device region (2001-07-03),

5. 6205013 - Multi-layer metallization capacitive structure for reduction of the simultaneous switching noise in integrated circuits (2001-03-20),

6. 6174760 - Method of improving vertical BJT gain (2001-01-16),

7. 6165852 - Method of fabricating integration of high-voltage devices and (2000-12-26),

8. 6153913 - Electrostatic discharge protection circuit (2000-11-28),

9. 6063674 - Method for forming high voltage device (2000-05-16),

10. 6040601 - High voltage device (2000-03-21),

11. 5966608 - Method of forming high voltage device (1999-10-12),

12. 5894155 - Metal gate high voltage integrated circuit/process (1999-04-13),

13. 5686347 - Self isolation manufacturing method (1997-11-11),

14. 5624857 - Process for fabricating double well regions in semiconductor devices (1997-04-29),

15. 5614421 - Method of fabricating junction termination extension structure for (1997-03-25),

Title: Sheng-Hsing Yang: Innovator from Hsinchu

Introduction: Sheng-Hsing Yang is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Sheng-Hsing Yang holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Sheng-Hsing Yang has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Sheng-Hsing Yang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing.

Conclusion: Sheng-Hsing Yang's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventors.

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