The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Apr. 06, 1998
United Micrelectronics Corp., Hsinchu, TW;
Abstract
A multi-layer metallization capacitive structure is provided to a conductive line, such as a power line or signal transmission line in an integrated circuit, where the undesired effect of simultaneous switching noise (SSN) is adverse due to rapid switching of pulses in a digital signal. The multi-layer metallization capacitive structure can help reduce the SSN effect in the integrated circuit by providing at least one metallization layer which extends substantially beneath the conductive line; and at least one dielectric layer sandwiched between the power line and the metallization layer. The multi-layer metallization capacitive structure has an optimal effect if the metallization layer is designed to be precisely equal in width to the power line. The multi-layer metallization capacitive structure has an advantage over the prior art in that it can be formed together with the processing for forming multiple interconnects in the integrated circuit without the need to devise additional processes. Moreover, it requires a reduced layout area to implement as compared to the conventional on-chip capacitor.