The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2000
Filed:
May. 27, 1998
Applicant:
Inventors:
Jeng Gong, Hsinchu, TW;
Sheng-Hsing Yang, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257341 ; 257327 ; 257349 ; 257374 ; 257394 ; 257401 ;
Abstract
A high voltage device. A first-type semiconductor substrate having at least a gate formed thereon is provided. The high voltage comprises a second-type first diffusion region in the semiconductor region, a second-type second diffusion region within the first diffusion region, a second-type third diffusion region under the second diffusion region, a field oxide layer on a part of the second diffusion region, and a first-type source/drain region under a surface between the field oxide layer and the gate.