The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Apr. 25, 2000
Applicant:
Inventors:
Sheng-Lung Chen, Hsinchu, TW;
Sheng-Hsing Yang, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438275 ; 438276 ; 438514 ; 438549 ;
Abstract
The invention describes a method of fabricating the integration of high-voltage devices and low-voltage devices. The ion implantation steps for forming the isolation doping regions and the drafting doping regions in the high-voltage device are used to form simultaneously the anti-punch-through regions in the low-voltage device. The production of the integrated circuit is then finished with other process steps.
Chen, Sheng-Lung. (2000). Method of fabricating integration of high-voltage devices and (U.S. Patent No. 6165852). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6165852
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile