The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1997
Filed:
Dec. 27, 1994
Sheng-Hsing Yang, Hsinchu, TW;
United Microelectronics Corporation, Hsin-Chu, TW;
Abstract
A method provides for manufacturing an MOSFET semiconductor device with an array of semiconductor structures on a lightly doped semiconductor substrate. A mask is formed upon the substrate with openings therein. An oxide is formed in the semiconductor substrate. The oxide extends down into sunken regions in the substrate through the openings in the mask. The oxide is removed from the substrate opening the sunken regions in the substrate. Spacers are formed in the openings in the mask forming smaller openings in the spacers. Then, ions are introduced into the substrate below the sunken regions through the smaller openings to form channel stop regions. Then the spacers are removed. A second oxide is formed in the sunken regions.