Taichung, Taiwan

Shao-Yu Lin

USPTO Granted Patents = 9 

Average Co-Inventor Count = 5.9

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2021-2025

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9 patents (USPTO):Explore Patents

Title: Biography of Inventor Shao-Yu Lin

Introduction

Shao-Yu Lin is a prominent inventor based in Taichung, Taiwan, known for his significant contributions to the field of memory devices. With a total of 8 patents to his name, Lin has made remarkable advancements in the technology of magnetoresistive memory.

Latest Patents

Among his latest patents is the "Magnetoresistive memory device and manufacturing method thereof," which outlines a method for forming a memory device that includes bottom conductive lines, magnetic tunnel junction stacks, and top conductive lines. Another notable patent is the "Method for manufacturing memory device," which describes a process involving the formation of a memory stack over a substrate, the deposition of a dielectric layer, and the creation of a spin-orbit-torque layer.

Career Highlights

Shao-Yu Lin has worked with leading organizations in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has greatly influenced his innovative work in memory technology.

Collaborations

Throughout his career, Lin has collaborated with esteemed colleagues such as Ya-Jui Tsou and Chee-Wee Liu, contributing to various research projects and patent developments in the field of memory devices.

Conclusion

Shao-Yu Lin's contributions to the field of memory technology through his patents and collaborations highlight his role as a

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