The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
May. 04, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Jih-Chao Chiu, New Taipei, TW;
Ya-Jui Tsou, Taichung, TW;
Wei-Jen Chen, Tainan, TW;
Chee-Wee Liu, Taipei, TW;
Shao-Yu Lin, Taichung, TW;
Chih-Lin Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD .., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A memory device includes a spin-orbit-transfer (SOT) bottom electrode, an SOT ferromagnetic free layer, a first tunnel barrier layer, a spin-transfer-torque (STT) ferromagnetic free layer, a second tunnel barrier layer and a reference layer. The SOT ferromagnetic free layer is over the SOT bottom electrode. The SOT ferromagnetic free layer has a magnetic orientation switchable by the SOT bottom electrode using a spin Hall effect or Rashba effect. The first tunnel barrier layer is over the SOT ferromagnetic free layer. The STT ferromagnetic free layer is over the first tunnel barrier layer and has a magnetic orientation switchable using an STT effect. The second tunnel barrier layer is over the STT ferromagnetic free layer. The second tunnel barrier layer has a thickness different from a thickness of the first tunnel barrier layer. The reference layer is over the second tunnel barrier layer and has a fixed magnetic orientation.