The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jun. 02, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Ya-Jui Tsou, Taichung, TW;
Jih-Chao Chiu, New Taipei, TW;
Huan-Chi Shih, Chiayi County, TW;
Chee-Wee Liu, Taipei, TW;
Shao-Yu Lin, Taichung, TW;
Chih-Lin Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A method of forming a memory device including forming a bottom electrode via (BEVA) in a dielectric layer, forming a magnetic tunnel junction (MTJ) multilayer structure over the BEVA, forming a top electrode on the MTJ multilayer structure, patterning the MTJ multilayer structure using the top electrode as an etch mask to form a MTJ stack, forming a first interlayer dielectric (ILD) layer over the MTJ stack, and after forming the first ILD layer, forming a ferromagnetic metal that exerts a magnetic field on the MTJ stack.