The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Feb. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Wei-Jen Chen, Tainan, TW;
Ya-Jui Tsou, Taichung, TW;
Chee-Wee Liu, Taipei, TW;
Shao-Yu Lin, Taichung, TW;
Chih-Lin Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A memory structure comprises a dielectric layer, a first ferromagnetic bottom electrode, a second ferromagnetic bottom electrode, an SOT channel layer, and an MTJ structure. The dielectric layer is over the substrate. The first ferromagnetic bottom electrode extends through the dielectric layer. The second ferromagnetic bottom electrode extends through the dielectric layer, and is spaced apart from the first ferromagnetic bottom electrode. The SOT channel layer extends from the first ferromagnetic bottom electrode to the second ferromagnetic bottom electrode. The MTJ structure is over the SOT channel layer.