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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11749328 B1

PDFFull Text
Date of Patent:
Sep. 05, 2023

Filed:

Jul. 25, 2022

Magnetoresistive memory device and manufacturing method thereof

Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Zong-You Luo, Taoyuan, TW;

Ya-Jui Tsou, Taichung, TW;

Chee-Wee Liu, Taipei, TW;

Shao-Yu Lin, Taichung, TW;

Liang-Chor Chung, Hsinchu County, TW;

Chih-Lin Wang, Hsinchu County, TW;

Assignees:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

NATIONAL TAIWAN UNIVERSITY, Taipei, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Victoria K Hall

Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10B 61/20 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.

Find Patent Forward Citations

Luo, Zong-You. (2023). Magnetoresistive memory device and manufacturing method thereof (U.S. Patent No. 11749328). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11749328

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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