The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Jul. 17, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Ya-Jui Tsou, Taichung, TW;
Zong-You Luo, Taoyuan, TW;
Chee-Wee Liu, Taipei, TW;
Shao-Yu Lin, Taichung, TW;
Liang-Chor Chung, Hsinchu County, TW;
Chih-Lin Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A method includes forming a memory stack over a substrate. A dielectric layer is deposited to cover the memory stack. An opening is formed in the dielectric layer. The opening does not expose the memory stack. A spin-orbit-torque (SOT) layer is formed in the opening. A free layer is formed over the dielectric layer to interconnect the memory stack and the SOT layer.