The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Apr. 07, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Ya-Jui Tsou, Taichung, TW;
Wei-Jen Chen, Tainan, TW;
Pang-Chun Liu, Taoyuan, TW;
Chee-Wee Liu, Taipei, TW;
Shao-Yu Lin, Taichung, TW;
Chih-Lin Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A memory device comprises a source region, a drain region, a channel region, a gate dielectric layer, an MTJ stack, and a metal gate. The source region and the drain region are over a substrate. The channel region is between the source region and the drain region. The gate dielectric layer is over the channel region. The MTJ stack is over the gate dielectric layer. The MTJ stack comprises a first ferromagnetic layer, a second ferromagnetic layer with a switchable magnetization, and a tunnel barrier layer between the first and second ferromagnetic layers. The metal gate is over the MTJ stack.