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For the Inventor, By the Inventor

Hsinchu, Taiwan

Shao-Chang Huang

This inventor holds 56 USPTO granted patents and 5 published patent applications, primarily in Electrostatic Discharge Protection. Top assignees: Vanguard International Semiconductor Corporation, Taiwan Semiconductor Manufacturing Comp. Ltd., Ememory Technology Inc.. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shao-Chang Huang. Retrieved from https://idiyas.com/inventor/shao-chang-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 56 

% Patents Active = 80.4

Average Co-Inventor Count = 3.2

ph-index = 8

Forward Citations = 192(Granted Patents)

Forward Citations (Not Self Cited) = 174(Dec 10, 2025)


Location History:

  • Hsinchu, CN (2008)
  • Hsin-Chu, TW (2006 - 2024)

Company Filing History:

goldMedal35 out of 1,133 
 
Vanguard International Semiconductor Corporation
 patents
silverMedal14 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
bronzeMedal7 out of 439 
 
Ememory Technology Inc.
 patents

Years Active: 2006-2026

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Areas of Expertise:
Electrostatic Discharge
Semiconductor Structure
Voltage Tracking
Protection Circuit
High-Voltage Device
Integrated Circuit
Driving Circuit
Control Circuit
Power-On Control
ESD Protection Devices
Anti-Floating Circuit
SOI MOSFET
56 patents (USPTO):Explore Patents
1. 12635169 - Semiconductor device integrating a high electron mobility transistor and a resistor (2026-05-19),
2. 12501717 - Semiconductor structure with a gate and a shielding structure (2025-12-16),
3. 12500410 - Driving circuit (2025-12-16),
4. 12444935 - Electrostatic discharge protection circuit (2025-10-14),
5. 12419115 - Electrostatic discharge protection circuit (2025-09-16),
6. 12334920 - Level shifter (2025-06-17),
7. 12107415 - Electrostatic discharge protection circuit and electronic circuit (2024-10-01),
8. 11940828 - Voltage tracking circuits with low power consumption and electronic circuits using the same (2024-03-26),
9. 11894430 - Semiconductor structure (2024-02-06),
10. 11811222 - Electrostatic discharge protection circuit (2023-11-07),
11. 11810872 - Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD) (2023-11-07),
12. 11652477 - Voltage tracking circuits and electronic circuits (2023-05-16),
13. 11574997 - Semiconductor structure and operation circuit (2023-02-07),
14. 11569657 - Protection circuits (2023-01-31),
15. 11527884 - Protection circuit (2022-12-13),

Title: The Innovative Journey of Inventor Shao-Chang Huang

Introduction: Shao-Chang Huang, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Shao-Chang Huang holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and creativity.

Career Highlights: Throughout his illustrious career, Shao-Chang Huang has worked with leading tech companies and research institutions, spearheading projects that have pushed the boundaries of innovation. His dedication to excellence and passion for discovery have earned him a reputation as a visionary in the industry.

Collaborations: Shao-Chang Huang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing. His ability to work effectively in multidisciplinary teams has led to the development of cutting-edge technologies that have revolutionized the way we live and work.

Conclusion: In conclusion, Shao-Chang Huang's relentless pursuit of innovation and his commitment to pushing the limits of what is possible have cemented his legacy as a pioneering inventor in the world of technology. His work continues to inspire future generations of inventors to dream big and create a better tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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