The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Nov. 29, 2022
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Li-Fan Chen, Hsinchu City, TW;
Shao-Chang Huang, Hsinchu City, TW;
Jian-Hsing Lee, Hsinchu City, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device includes a high electron mobility transistor (HEMT) disposed in an annular active element region, and a resistor disposed in a passive element region surrounded by the annular active element region. The HEM includes a first portion of a compound semiconductor barrier layer stacked on a first portion of a compound semiconductor channel layer. A source electrode, a gate electrode, and a drain electrode are disposed on the first portion of the compound semiconductor barrier layer. The resistor includes a second portion of the compound semiconductor barrier layer stacked on a second portion of the compound semiconductor channel layer. An input terminal electrode is disposed on the second portion of the compound semiconductor barrier layer and located at the center of the passive element region.