The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Nov. 17, 2022
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chih-Hsuan Lin, Hsinchu, TW;
Shao-Chang Huang, Hsinchu, TW;
Wen-Hsin Lin, Zhubei, TW;
Yeh-Ning Jou, Hsinchu, TW;
Hwa-Chyi Chiou, Hsinchu, TW;
Chun-Chih Chen, New Taipei, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes first, second, and third transistors and a discharge circuit. The first transistor has a first gate, a first drain coupled to the bonding pad, and a first source coupled to a first node. The second transistor has a second gate coupled to a power terminal, a second drain coupled to the first gate, and a second source coupled to a ground. The third transistor has a third gate coupled to the power terminal, a third drain coupled to the first node, and a third source coupled to the ground. The discharge circuit is controlled by a driving voltage at the first node. In response to an electrostatic discharge event occurring on the bonding pad, the discharge circuit provides a discharge path between the bonding pad and the ground according to the driving voltage.